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NTE387 Silicon NPN Transistor Power Amp, Switch
Features: D High Collector-Emitter Sustaining Voltage D High DC Current Gain D Low Collector-Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70C/W Note 1. Matched pairs are available upon request (NTE387MP). Matched pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 50mA, IB = 0, Note 2 ICEO ICEX Emitter Cutoff Current IEBO VCE = 75V, IB = 0 VCE = 180V, VEB(off) = 1.5V VCE = 180V, VEB(off) = 1.5V, TC = +150C VBE = 6V, IC = 0 150 - - - - - - - - - - 50 10 1.0 100 V A A A A Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified)
Parameter ON Characteristics (Note 2) DC Current Gain hFE VCE = 4V, IC = 1A VCE = 4V, IC = 20A VCE = 4V, IC = 50A Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) VBE(on) fT Cob tr ts tf IC = 20A, IB = 2A IC = 50A, IB = 10A Base-Emitter Saturation Voltage IC = 20A, IB = 2A IC = 50A, IB = 10A Base-Emitter ON Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance Switching Characteristics Rise Time Storage Time Fall Time VCC = 80V, IC = 20A, IB1 = 2A, VBE(off) = 5V VCC = 80V, IC = 20A, IB1 = IB2 = 2A - - - - - - 0.35 0.80 0.25 s s s VCE = 10V, IC = 1A, ftest = 10MHz, Note 3 VCB = 10V, IE = 0, ftest = 0.1MHz 30 - - - - 600 MHz pF VCE = 4V, IC = 20A 50 30 10 - - - - - - - - - - - - - 120 - 1 3 1.8 3.5 1.8 V V V V V Symbol Test Conditions Min Typ Max Unit
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Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 3. fT = (hfe) test
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min Emitter .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max Collector/Case

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